MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current Terminal-based linearity is used to

Terminal-based linearity is used to describe the linearity of MFCs and MFMs

It describes an in-line

2  The general trend in wafer geometry is to a larger diameter but even so the thickness increases correspondingly

This Standard specifies measurement methods

本スタンダードは，global Facilities Technical Committeeで技術的に承認されている。現版は2012年6月18日，global Audits and Reviews Subcommitteeにて発行が承認された。2012年8月にwww

MF095000 - SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching Revision:SEMI MF950-1107 (Reapproved 1023) - Current Terminal-based linearity is used toThis Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening. The damage is revealed by a preferential etch that removes silicon in the region of the deformation. Preferential etching occurs because the chemical potential in the region of